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PMEG3020EPA
2 A low VF MEGA Schottky barrier rectifier
Rev. 01 -- 15 December 2009 Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection. PMEG3020EPA is encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.
1.2 Features
Average forward current: IF(AV) 2 A Reverse voltage: VR 30 V Low forward voltage Exposed heat sink (cathode pad) for excellent thermal and electrical conductivity Leadless small SMD plastic package with medium power capability AEC-Q101 qualified
1.3 Applications
Low voltage rectification High efficiency DC-to-DC conversion Switch Mode Power Supply (SMPS) Reverse polarity protection Low power consumption applications Battery chargers for mobile equipment
1.4 Quick reference data
Table 1. Quick reference data Tj = 25 C unless otherwise specified. Symbol IF(AV) Parameter average forward current Conditions square wave; = 0.5; f = 20 kHz Tamb 65 C Tsp 140 C VR VF IR
[1]
[1]
Min
Typ
Max
Unit
-
410 435
2 2 30 470 2500
A A V mV A
reverse voltage forward voltage reverse current IF = 2 A VR = 30 V
Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
NXP Semiconductors
PMEG3020EPA
2 A low VF MEGA Schottky barrier rectifier
2. Pinning information
Table 2. Pin 1 2 3 Pinning Description anode anode cathode
3 3 1, 2
006aab624
Simplified outline
Graphic symbol
1
2
Transparent top view
3. Ordering information
Table 3. Ordering information Package Name Description Version Type number
PMEG3020EPA HUSON3 plastic thermal enhanced ultra thin small outline package; SOT1061 no leads; three terminals; body 2 x 2 x 0.65 mm
4. Marking
Table 4. Marking codes Marking code A2 Type number PMEG3020EPA
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VR IF(AV) Parameter reverse voltage average forward current Conditions Tj = 25 C square wave; = 0.5; f = 20 kHz Tamb 65 C Tsp 140 C IFRM IFSM Ptot repetitive peak forward current non-repetitive peak forward current total power dissipation tp 1 ms; 0.25 square wave; tp = 8 ms Tamb 25 C
[2] [1]
Min -
Max 30
Unit V
-
2 2 7 17 500 960 1800
A A A A mW mW mW
[2][3]
[4][5] [4][6] [4][1]
PMEG3020EPA_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 15 December 2009
2 of 13
NXP Semiconductors
PMEG3020EPA
2 A low VF MEGA Schottky barrier rectifier
Table 5. Limiting values ...continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Tj Tamb Tstg
[1] [2] [3] [4] [5] [6]
Parameter junction temperature ambient temperature storage temperature
Conditions
Min -55 -65
Max 150 +150 +150
Unit C C C
Device mounted on a ceramic PCB, Al2O3, standard footprint. Both anode pins connected. Tj = 25 C prior to surge. Reflow soldering is the only recommended soldering method. Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
6. Thermal characteristics
Table 6. Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions in free air
[1][2] [3] [4] [5]
Min -
Typ -
Max 250 130 70 12
Unit K/W K/W K/W K/W
Rth(j-sp)
[1] [2] [3] [4] [5] [6]
thermal resistance from junction to solder point
[6]
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Reflow soldering is the only recommended soldering method. Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. Device mounted on a ceramic PCB, Al2O3, standard footprint. Soldering point of cathode tab.
PMEG3020EPA_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 15 December 2009
3 of 13
NXP Semiconductors
PMEG3020EPA
2 A low VF MEGA Schottky barrier rectifier
103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.25 0.1 0.05 10 0.02 0 0.01 0.33 0.2
006aab637
1 10-3
10-2
10-1
1
10
102 tp (s)
103
FR4 PCB, standard footprint
Fig 1.
103 Zth(j-a) (K/W)
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aab638
duty cycle = 102 1 0.75 0.5 0.33 0.25 0.1 10 0 0.02 0.01 0.2 0.05
1 10-3
10-2
10-1
1
10
102 tp (s)
103
FR4 PCB, mounting pad for cathode 1 cm2
Fig 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG3020EPA_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 15 December 2009
4 of 13
NXP Semiconductors
PMEG3020EPA
2 A low VF MEGA Schottky barrier rectifier
102 duty cycle = 1 0.75 Zth(j-a) (K/W) 0.5 0.33 0.25 10 0.1 0.2 0.05
006aab639
0 0.02 0.01
1 10-3
10-2
10-1
1
10
102 tp (s)
103
Ceramic PCB, Al2O3, standard footprint
Fig 3.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7. Characteristics Tj = 25 C unless otherwise specified. Symbol VF Parameter forward voltage Conditions IF = 0.5 A IF = 1 A IF = 2 A IR Cd reverse current diode capacitance VR = 10 V VR = 30 V f = 1 MHz VR = 1 V VR = 10 V trr
[1]
Min [1]
Typ 290 335 410 100 435 150 55 47
Max 470 2500 -
Unit mV mV mV A A pF pF ns
reverse recovery time
-
When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA.
PMEG3020EPA_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 15 December 2009
5 of 13
NXP Semiconductors
PMEG3020EPA
2 A low VF MEGA Schottky barrier rectifier
10 IF (A)
(1)
006aab640
1 IR (A) 10-1 10-2
006aab641
(1) (2)
1
(2)
10-1
(3)
(4)
(5)
10-3
(3)
10-2
10-4 10-5
10-3
10-6 10-7 0 0.2 0.4 VF (V) 0.6 0 10
(4)
10-4
20 VR (V)
30
(1) Tj = 150 C (2) Tj = 125 C (3) Tj = 85 C (4) Tj = 25 C (5) Tj = -40 C
(1) Tj = 125 C (2) Tj = 85 C (3) Tj = 25 C (4) Tj = -40 C
Fig 4.
Forward current as a function of forward voltage; typical values
300 Cd (pF) 200
Fig 5.
Reverse current as a function of reverse voltage; typical values
006aab642
100
0 0 10 20 VR (V) 30
f = 1 MHz; Tamb = 25 C
Fig 6.
Diode capacitance as a function of reverse voltage; typical values
PMEG3020EPA_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 15 December 2009
6 of 13
NXP Semiconductors
PMEG3020EPA
2 A low VF MEGA Schottky barrier rectifier
1.5 PF(AV) (W) 1.2
(2) (1) (3)
006aab643
4.5 PR(AV) (W) 3.0
(1) (2) (3)
006aab644
(4)
0.9
0.6 1.5
(4)
0.3
0.0 0.0
0 1.0 2.0 IF(AV) (A) 3.0 0 10 20 VR (V) 30
Tj = 150 C (1) = 0.1 (2) = 0.2 (3) = 0.5 (4) = 1
Tj = 125 C (1) = 1 (2) = 0.9 (3) = 0.8 (4) = 0.5
Fig 7.
Average forward power dissipation as a function of average forward current; typical values
3.0
006aab645
Fig 8.
Average reverse power dissipation as a function of reverse voltage; typical values
3.0
(1)
006aab646
IF(AV) (A)
(1)
IF(AV) (A) 2.0
(2) (3) (3) (4) (2)
2.0
1.0
(4)
1.0
0.0 0 25 50 75 100 125 150 175 Tamb (C)
0.0 0 25 50 75 100 125 150 175 Tamb (C)
FR4 PCB, standard footprint Tj = 150 C (1) = 1; DC (2) = 0.5; f = 20 kHz (3) = 0.2; f = 20 kHz (4) = 0.1; f = 20 kHz
FR4 PCB, mounting pad for cathode 1 cm2 Tj = 150 C (1) = 1; DC (2) = 0.5; f = 20 kHz (3) = 0.2; f = 20 kHz (4) = 0.1; f = 20 kHz
Fig 9.
Average forward current as a function of ambient temperature; typical values
Fig 10. Average forward current as a function of ambient temperature; typical values
(c) NXP B.V. 2009. All rights reserved.
PMEG3020EPA_1
Product data sheet
Rev. 01 -- 15 December 2009
7 of 13
NXP Semiconductors
PMEG3020EPA
2 A low VF MEGA Schottky barrier rectifier
3.0 IF(AV) (A) 2.0
(1)
006aab647
3.0 IF(AV) (A) 2.0
(1)
006aab648
(2)
(2)
(3) (4)
(3) (4)
1.0
1.0
0.0 0 25 50 75 100 125 150 175 Tamb (C)
0.0 0 25 50 75 100 125 150 175 Tsp (C)
Ceramic PCB, Al2O3, standard footprint Tj = 150 C (1) = 1; DC (2) = 0.5; f = 20 kHz (3) = 0.2; f = 20 kHz (4) = 0.1; f = 20 kHz
Tj = 150 C (1) = 1; DC (2) = 0.5; f = 20 kHz (3) = 0.2; f = 20 kHz (4) = 0.1; f = 20 kHz
Fig 11. Average forward current as a function of ambient temperature; typical values
Fig 12. Average forward current as a function of solder point temperature; typical values
PMEG3020EPA_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 15 December 2009
8 of 13
NXP Semiconductors
PMEG3020EPA
2 A low VF MEGA Schottky barrier rectifier
8. Test information
t1 t2
P t2 t1
duty cycle =
t
006aaa812
Fig 13. Duty cycle definition
The current ratings for the typical waveforms as shown in Figure 9, 10, 11 and 12 are calculated according to the equations: I F ( AV ) = I M x with IM defined as peak current, I RMS = I F ( AV ) at DC, and I RMS = I M x with IRMS defined as RMS current.
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications.
9. Package outline
1.3 0.35 0.25 1.05 0.95 1 2 0.45 0.35 2.1 1.9 0.65 max
1.1 0.9 0.3 0.2 3 1.6 1.4 2.1 1.9
Dimensions in mm
09-11-12
Fig 14. Package outline SOT1061
PMEG3020EPA_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 15 December 2009
9 of 13
NXP Semiconductors
PMEG3020EPA
2 A low VF MEGA Schottky barrier rectifier
10. Packing information
Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PMEG3020EPA
[1]
Package SOT1061
Description 4 mm pitch, 8 mm tape and reel
Packing quantity 3000 -115
For further information and the availability of packing methods, see Section 14.
11. Soldering
2.1 1.3 0.5 (2x) 0.4 (2x)
0.5 (2x)
0.6 (2x)
1.05 2.3 0.6 0.55 0.25 1.1 1.2
0.25
0.25
0.4 0.5 1.6 1.7 solder paste = solder lands solder resist occupied area Dimensions in mm
sot1061_fr
Reflow soldering is the only recommended soldering method.
Fig 15. Reflow soldering footprint SOT1061
PMEG3020EPA_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 15 December 2009
10 of 13
NXP Semiconductors
PMEG3020EPA
2 A low VF MEGA Schottky barrier rectifier
12. Revision history
Table 9. Revision history Release date 20091215 Data sheet status Product data sheet Change notice Supersedes Document ID PMEG3020EPA_1
PMEG3020EPA_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 15 December 2009
11 of 13
NXP Semiconductors
PMEG3020EPA
2 A low VF MEGA Schottky barrier rectifier
13. Legal information
13.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
13.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
PMEG3020EPA_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 15 December 2009
12 of 13
NXP Semiconductors
PMEG3020EPA
2 A low VF MEGA Schottky barrier rectifier
15. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 Quality information . . . . . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packing information . . . . . . . . . . . . . . . . . . . . 10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 15 December 2009 Document identifier: PMEG3020EPA_1

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